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IL1, IL2, IL5
Vishay Semiconductors
Optocoupler, Phototransistor Output, with Base Connection
FEATURES
A C NC
i179004
1 2 3
6B 5C 4E
* Current transfer ratio (see order information) * Isolation test voltage 5300 VRMS * Lead (Pb)-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
DESCRIPTION
The IL1, IL2, IL5 are optically coupled isolated pairs employing GaAs infrared LEDs and silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the drive while maintaining a high degree of electrical isolation between input and output. The IL1, IL2, IL5 are especially designed for driving medium-speed logic and can be used to eliminate troublesome ground loop and noise problems. These couplers can be used also to replace relays and transformers in many digital interface applications such as CRT modulation.
AGENCY APPROVALS
* UL1577, file no. E52744 system code H or J, double protection * DIN EN 60747-5-5 (VDE 0884) available with option 1 * BSI IEC 60950; IEC 60065
ORDER INFORMATION
PART IL1 IL2 IL5 IL1-X006 IL2-X006 IL2-X009 IL5-X009 Note For additional information on the available options refer to option information. REMARKS CTR > 20 %, DIP-6 CTR > 100 %, DIP-6 CTR > 50 %, DIP-6 CTR > 20 %, DIP-6 400 mil (option 6) CTR > 100 %, DIP-6 400 mil (option 6) CTR >100 %, SMD-6 (option 9) CTR > 50 %, SMD-6 (option 9)
ABSOLUTE MAXIMUM RATINGS
PARAMETER INPUT Reverse voltage Forward current Surge current Power dissipation Derate linearly from 25 C OUTPUT
(1)
TEST CONDITION
PART
SYMBOL VR IF IFSM Pdiss
VALUE 6 60 2.5 100 1.33 50 70 70 7 70 50 400 200 2.6
UNIT V mA A mW mW/C V V V V V mA mA mW mW/C
IL1 Collector emitter breakdown voltage Emitter base breakdown voltage Collector base breakdown voltage Collector current Power dissipation Derate linearly from 25 C t < 1.0 ms IL2 IL5
BVCEO BVCEO BVCEO BVEBO BVCBO IC IC Pdiss
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For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83612 Rev. 1.6, 10-Dec-08
IL1, IL2, IL5
Optocoupler, Phototransistor Output, with Base Connection
ABSOLUTE MAXIMUM RATINGS
PARAMETER COUPLER Package power dissipation Derate linearly from 25 C Isolation test voltage between emitter and detector Creepage distance Clearance distance Comparative tracking index per DIN IEC 112/VDE 0303, part 1 Isolation resistance Storage temperature Operating temperature Junction temperature Soldering temperature (2) 2.0 mm from case bottom VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C CTI RIO RIO Tstg Tamb Tj Tsld VISO Ptot 250 3.3 5300 7 7 175 1012 1011 - 40 to + 150 - 40 to + 100 100 260 C C C C mW mW/C VRMS mm mm
(1)
Vishay Semiconductors
TEST CONDITION
PART
SYMBOL
VALUE
UNIT
Notes (1) T amb = 25 C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP).
ELECTRICAL CHARACTERISTICS
PARAMETER INPUT Forward voltage Breakdown voltage Reverse current Capacitance Thermal resistance junction to lead OUTPUT Collector emitter capacitance Collector base capacitance Emitter base capacitance Collector emitter leakage voltage Collector emitter saturation voltage Base emitter voltage DC forward current gain DC forward current gain saturated Thermal resistance junction to lead COUPLER Capacitance (input to output) Insulation resistance VI-O = 0 V, f = 1.0 MHz VI-O = 500 V CIO RS 0.6 1014 pF VCE = 5.0 V, f = 1.0 MHz VCB = 5.0 V, f = 1.0 MHz VEB = 5.0 V, f = 1.0 MHz VCE = 10 V ICE = 1.0 mA, IB = 20 A VCE = 10 V, IB = 20 A VCE = 10 V, IB = 20 A VCE = 0.4 V, IB = 20 A CCE CCB CEB ICEO VCEsat VBE hFE hFEsat Rthjl 200 120 6.8 8.5 11 5 0.25 0.65 650 400 500 1800 600 K/W 50 pF pF pF nA V V IF = 60 mA IR = 10 A VR = 6.0 V VR = 0 V, f = 1.0 MHz VF VBR IR CO Rthjl 6 1.25 30 0.01 40 750 10 1.65 V V A pF K/W TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Note Tamb = 25 C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.
Document Number: 83612 Rev. 1.6, 10-Dec-08
For technical questions, contact: optocoupler.answers@vishay.com
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IL1, IL2, IL5
Vishay Semiconductors
Optocoupler, Phototransistor Output, with Base Connection
CURRENT TRANSFER RATIO
PARAMETER Current transfer ratio (collector emitter saturated) Current transfer ratio (collector emitter) Current transfer ratio (collector base) TEST CONDITION IF = 10 mA, VCE = 0.4 V PART IL1 IL2 IL5 IL1 IF = 10 mA, VCE = 10 V IL2 IL5 IL1 IF = 10 mA, VCB = 9.3 V IL2 IL5 SYMBOL CTRCEsat CTRCEsat CTRCEsat CTRCE CTRCE CTRCE CTRCB CTRCB CTRCB 20 100 50 MIN. TYP. 75 170 100 80 200 130 0.25 0.25 0.25 300 500 400 MAX. UNIT % % % % % % % % %
SWITCHING CHARACTERISTICS
PARAMETER NON-SATURATED Current time VCE = 5 V, RL = 75 , tP measured at 50 % of output VCE = 5 V, RL = 75 , tP measured at 50 % of output VCE = 5 V, RL = 75 , tP measured at 50 % of output VCE = 5 V, RL = 75 , tP measured at 50 % of output VCE = 5 V, RL = 75 , tP measured at 50 % of output VCE = 5 V, RL = 75 , tP measured at 50 % of output VCE = 5 V, RL = 75 , tP measured at 50 % of output IL1 IL2 IL5 IL1 IL2 IL5 IL1 IL2 IL5 IL1 IL2 IL5 IL1 IL2 IL5 IL1 IL2 IL5 IL1 IL2 IL5 IL1 Current time VCE = 0.4 V, RL = 1.0 k, VCL = 5 V, VTH = 1.5 V IL2 IL5 IL1 Delay time VCE = 0.4 V, RL = 1.0 k, VCL = 5 V, VTH = 1.5 V IL2 IL5 IL1 Rise time VCE = 0.4 V, RL = 1.0 k, VCL = 5 V, VTH = 1.5 V IL2 IL5 IL1 Storage time VCE = 0.4 V, RL = 1.0 k, VCL = 5 V, VTH = 1.5 V IL2 IL5 tS tr tD IF tPLH tPHL tf ts tr tD IF 20 4 10 0.8 1.7 1.7 1.9 2.6 2.6 0.2 0.4 0.4 1.4 2.2 2.2 0.7 1.2 1.1 1.4 2.3 2.5 20 5 10 0.8 1 1.7 1.2 2 7 7.4 5.4 4.6 s s s mA s s s s s s mA TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Delay time
Rise time
Storage time
Fall time
Propagation H to L
Propagation L to H SATURATED
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For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83612 Rev. 1.6, 10-Dec-08
IL1, IL2, IL5
Optocoupler, Phototransistor Output, with Base Connection
SWITCHING CHARACTERISTICS
PARAMETER SATURATED IL1 Fall time VCE = 0.4 V, RL = 1.0 k, VCL = 5 V, VTH = 1.5 V IL2 IL5 IL1 Propagation H to L VCE = 0.4 V, RL = 1.0 k, VCL = 5 V, VTH = 1.5 V IL2 IL5 IL1 Propagation L to H VCE = 0.4 V, RL = 1.0 k, VCL = 5 V, VTH = 1.5 V IL2 IL5 tPLH tPHL tf 7.6 13.5 20 1.6 5.4 2.6 8.6 7.4 7.2 s s s TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Vishay Semiconductors
COMMON MODE TRANSIENT IMMUNITY
PARAMETER Common mode rejection output high Common mode rejection output low Common mode coupling capacitance TEST CONDITION VCM = 50 VP-P, RL = 1 k, IF = 10 mA VCM = 50 VP-P, RL = 1 k, IF = 10 mA PART SYMBOL |CMH| |CML| CCM MIN. TYP. 5000 5000 0.01 MAX. UNIT V/s V/s pF
TYPICAL CHARACTERISTICS
Tamb = 25 C, unless otherwise specified
VCC = 5 V
IF
IF = 10 mA VO
tPHL VO tPLH tS 50 %
f = 10 kHz DF = 50 %
R L = 75
iil1_01
iil1_03
tD
tR
tF
Fig. 1 - Non-Saturated Switching Schematic
VCC = 5 V
Fig. 3 - Non-Saturated Switching Timing
IF
f = 10 kHz DF = 50 % RL
tD VO
V O
tR
tPLH VTH = 1.5 V tPHL tS tF
I = 10 mA
F
iil1_04
iil1_02
Fig. 2 - Saturated Switching Schematic Document Number: 83612 Rev. 1.6, 10-Dec-08
Fig. 4 - Saturated Switching Timing www.vishay.com 297
For technical questions, contact: optocoupler.answers@vishay.com
IL1, IL2, IL5
Vishay Semiconductors
Optocoupler, Phototransistor Output, with Base Connection
1.4
1.5 TA = - 55 C TA = 25 C
VF - Forward Voltage (V)
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.1 1
NCTR - Normalized CTR
Normalized to: VCE = 10 V, IF = 10 mA 1.0 CTRce(sat) VCE = 0.4 V TA = 70 C 0.5 NCTR(SAT) NCTR 0.0
TA = 100 C
10
100
iil1_08
0.1
1
10
100
iil1_05
I F - Forward Current (mA)
I F - LED Current (mA)
Fig. 5 - Forward Voltage vs. Forward Current
Fig. 8 - Normalized Non-Saturated and Saturated CTR vs. LED Current
1.5
1.5 Normalized to: VCE = 10 V, IF = 10 mA CTRce(sat) VCE = 0.4 V
NCTR - Normalized CTR
NCTR - Normalized CTR
Normalized to: VCE = 10 V, IF = 10 mA CTRce(sat) VCE = 0.4 V 1.0 TA = 100 C
1.0
0.5 NCTR(SAT) NCTR 0.0 0.1 1 10 100
0.5 NCTR(SAT) NCTR 0.0 0.1 1 10 100
iil1_06
I F - LED Current (mA)
iil1_09
IF - LED Current (mA)
Fig. 6 - Normalized Non-Saturated and Saturated CTR vs. LED Current
Fig. 9 - Normalized Non-Saturated and Saturated CTR, Tamb = 100 C vs. LED Current
1.5
35
Ice - Collector Current (mA)
NCTR - Normalized CTR
Normalized to: VCE = 10 V,IF = 10 mA CTRce(sat) VCE = 0.4 V 1.0 TA = 50 C
30 25 20 15 10 5 0 25 C 100 C 70 C 50 C
0.5 NCTR(SAT) NCTR 0.0 0.1 1 10 100
0
iil1_10
10
20
30
40
50
60
iil1_07
I F - LED Current (mA)
IF - LED Current (mA)
Fig. 7 - Normalized Non-Saturated and Saturated CTR vs. LED Current
Fig. 10 - Collector Emitter Current vs. Temperature and LED Current
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For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83612 Rev. 1.6, 10-Dec-08
IL1, IL2, IL5
Optocoupler, Phototransistor Output, with Base Connection
Vishay Semiconductors
10 5
10
I CEO - Collector Emitter (nA)
10 4 10 3 10 2 10 1 10 0 10 -1 10 -2 - 20 VCE = 10 V Typical Worst case
Normalized Photocurrent
Normalized to: IF = 10 mA 1
0.1
NIB-T = - 20 C A NIB-T = 25 C A NIB-T = 50 C A NIB-T = 70 C A
0
20
40
60
80
100
0.01 0.1 iil1_14
1
10
100
iil1_11
TA - Ambient Temperature (C)
IF - LED Current (mA)
Fig. 11 - Collector Emitter Leakage Current vs.Temperature
Fig. 14 - Normalized Photocurrent vs. IF and Temperature
1.5
1.2 Normalized to: IF = 10 mA Vcb = 9.3 V 70 C 50 C 1.0 25 C - 20 C 0.8 Normalized to: Ib = 20 A VCE = 10 V
NCTRcb - Normalized CTRcb
1.0
0.5 25 C 50 C 70 C 0.0 0.1 1 10 100
NhFE - Normalized hFE
0.6
0.4 1
iil1_15
10
100
1000
iil1_12
IF - LED Current (mA)
Ib - Base Current (A)
Fig. 12 - Normalized CTRcb vs. LED Current and Temperature
Fig. 15 - Normalized Non-Saturated hFE vs. Base Current and Temperature
1000 Icb = 1.0357 * IF ^ 1.3631
1.5 70 C 50 C 25 C 1.0 - 20 C
10
1 0.1 0.01 0.1
NhFE(sat) - Normalized SaturatedhFE
Icb - Collector Base Photocurrent - A
100
Normalized to: VCE = 10 V IB = 20 A
0.5
VCE = 0.4 V 0.0 1 10 100
iil1_16
1
10
100
1000
iil1_13
IF - LED Current (mA)
IB - Base Current (A)
Fig. 13 - Collector Base Photocurrent vs. LED Current
Fig. 16 - Normalized Saturated hFE vs. Base Current and Temperature
Document Number: 83612 Rev. 1.6, 10-Dec-08
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com 299
IL1, IL2, IL5
Vishay Semiconductors
Optocoupler, Phototransistor Output, with Base Connection
1000
2.5
100
tpHL
2.0
10 tpLH 1 0.1 1 10
1.5
1.0 100
iil1_17
RL - Collector Load Resistor (k)
Fig. 17 - Propagation Delay vs. Collector Load Resistor
PACKAGE DIMENSIONS in inches (millimeters)
3 2 1 Pin one ID
0.248 (6.30) 0.256 (6.50)
tpHL - Propagation Delay (s)
tp - Propagation Delay (s)
IF = 10 mA VCC = 5 V, Vth = 1.5 V
4
5
6
ISO method A
0.335 (8.50) 0.343 (8.70) 0.039 (1.00) min. 0.048 (0.45) 0.300 (7.62) typ.
0.022 (0.55) 0.130 (3.30) 0.150 (3.81)
4 typ. 0.031 (0.80) min. 0.031 (0.80) 0.018 (0.45) 0.022 (0.55)
i178004
18 0.114 (2.90) 0.130 (3.0) 3 to 9 0.010 (0.25) typ. 0.300 to 0.347 (7.62 to 8.81)
0.035 (0.90) 0.100 (2.54) typ.
Option 6
0.407 (10.36) 0.391 (9.96) 0.307(7.8) 0.291(7.4)
Option 9
0.375 (9.53) 0.395 (10.03 ) 0.300 (7.62 ) ref.
0.0040 (0.102) 0.0098 (0.249) 0.020 (0.51) 0.040 (1.02) 0.315 (8.00) min.
0.012 (0.30) typ.
18493
0.014(0.35) 0.010 (0.25) 0.400(10.16) 0.430 (10.92)
15 max.
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For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83612 Rev. 1.6, 10-Dec-08
IL1, IL2, IL5
Optocoupler, Phototransistor Output, with Base Connection
OZONE DEPLETING SUBSTANCES POLICY STATEMENT
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA. 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
Vishay Semiconductors
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number: 83612 Rev. 1.6, 10-Dec-08
For technical questions, contact: optocoupler.answers@vishay.com
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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